GaInP/AlGaInP index waveguide-type visible laser diodes with dry-etched mesa stripes

GaInP/AlGaInP index waveguide-type visible-light laser diodes with dry-etched mesa stripes have been fabricated by Cl₂ reactive ion beam etching for the first time. The AlGaInP cladding layer, which is normally very difficult to dry etch due to problems with Al oxidation and the low volatility of In and its reaction products, was etched smoothly with high depth accuracy. The etched mesa stripes were buried by metal organic vapour-phase epitaxy without crystal discontinuity at the regrown surface. The threshold current under room-temperature pulsed operation is 35 mA (L=300 mu m), which is almost the same value as that for wet-etched lasers.