Title :
7.4 Gbit monolithically integrated GaAs/AlGaAs laser diode-laser driver structure
Author :
Hornung, J. ; Wang, Z.G. ; Bronner, W. ; Kohler, Klaus ; Ganser, P. ; Raynor, B. ; Benz, W. ; Ludwig, Michael
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphysik, Freiburg, Germany
Abstract :
A molecular beam epitaxy (MBE) grown GaAs/AlGaAs multiquantum well laser, monolithically integrated with a laser driver was realised on 2 inch GaAs substrate wafers. In an optical data communication set up, performance up to data rates of 7.4 Gbit/s was demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; data communication equipment; digital communication systems; gallium arsenide; integrated optoelectronics; molecular beam epitaxial growth; optical communication equipment; semiconductor lasers; 7.4 Gbit/s; GaAs substrate wafers; GaAs-AlGaAs; MBE growth; MQW laser; data rates; molecular beam epitaxy; monolithically integrated; optical data communication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931127
