• DocumentCode
    953177
  • Title

    Vaporisation of GaAs during laser annealing

  • Author

    Badawi, M.H. ; Sealy, B.J. ; Stephens, K.G.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    15
  • Issue
    24
  • fYear
    1979
  • Firstpage
    786
  • Lastpage
    787
  • Abstract
    It is found that when uncoated GaAs samples are irradiated with a Q-switched ruby laser, the samples suffer substantial weight losses for laser cnergy densities > 0·3 J/cm2. These weight losses are believed to result from the vaporization of the samples during the period in which the surfaces are in a molten state. The incomplete electrical activation of implanted ions in GaAs after laser annealing can be accounted for by the weight-loss phenomenon.
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; laser beam effects; vaporisation; GaAs; Q switched ruby laser; electrical activation; implanted ions; laser annealing; laser irradiation; vaporisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790559
  • Filename
    4243733
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953177