DocumentCode :
953183
Title :
Fabrication of bubble memory chips
Author :
Takahashi, M. ; Nishida, H. ; Kasai, T. ; Sugita, Y.
Author_Institution :
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, Japan.
Volume :
10
Issue :
4
fYear :
1974
fDate :
12/1/1974 12:00:00 AM
Firstpage :
1067
Lastpage :
1071
Abstract :
Investigations have been made on the fabrication of accurate and uniform T-bar circuits. Chrome masks are preferable to emulsion masks, and furthermore, a minimum exposure and intimate contact have been demonstrated to be necessary for accurate and uniform pattern imaging on the AZ1350 resist. A newly developed chemical etchant, a nitric acid-base solution without ferric chloride, can almost eliminate undercutting of permalloy elements. Application of spin-on-glass prior to Permalloy evaporation can result in excellent step coverage at the places where T-bar circuits overlap conductors. Large memory chips having a capacity of 16 × 103bits and a storage density of 105bits/cm2have successfully been fabricated.
Keywords :
Magnetic bubble circuits; Magnetic bubble memories; Chemical elements; Circuits; Conductors; Detectors; Etching; Fabrication; Garnet films; Lithography; Radio frequency; Resists;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1974.1058518
Filename :
1058518
Link To Document :
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