DocumentCode :
953190
Title :
Wall placement in a cross-tie memory element
Author :
Lo, David S. ; Paul, Maynard C.
Author_Institution :
Sperry Univac, St. Paul, MN, USA
Volume :
10
Issue :
4
fYear :
1974
fDate :
12/1/1974 12:00:00 AM
Firstpage :
1079
Lastpage :
1081
Abstract :
Methods of placing parallel domain walls in magnetic films for a cross-tie memory are described, and a new technique is proposed which involves magnetic annealing at an elevated temperature after the film has been fabricated.
Keywords :
Annealing; Magnetic domain walls; Magnetic film memories; Anisotropic magnetoresistance; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic fields; Magnetic films; Magnetization; Perpendicular magnetic anisotropy; Stripline; Strips;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1974.1058519
Filename :
1058519
Link To Document :
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