The Plasma Oxidation of Metals in Forming Electronic Circuit Components

This study involves the fabrication of tantalum-pentoxide capacitors by other than the conventional thermal or aqueous electrolytic techniques. A new method of dielectric formation is described, and some of the results of the measurements performed on the passive devices are presented. This plasma-anodic process is then compared to the aqueous anodic processes, with the emphasis upon the compatibility of dry anodization techniques to vacuum techniques for the deposition of metallic thin films.