Plasma planarization for sensor applications

Filling trenches in silicon using phosphosilicate glass (PSG) provides many possibilities for novel device structures for sensors and actuators. This paper describes a plasma planarization technique that provides fully planarized PSG filled silicon trenches for sensor applications. The technique consists of planarizing the substrate using two photoresist layers and plasma etching-back. The lower resist layer is the AZ5214 image reversal resist, which is patterned and then thermally cured. The upper resist layer is a global HPR204 coating. The plasma etching-back is carried out using CHF₃/C₂F ₆ gas mixture with an O₂ addition. It is shown that by using the image reversal photoresist approach, fully planarized surface coating can be obtained without resorting to an additional mask. By adding 25 sccm (14%) O₂ into the 137 sccm CHF₃+18 sccm C₂F₆ gas mixture, the etch rates for the photoresist and PSG can be matched. Process optimization for the two layer resist coating and plasma etching is discussed