Title :
Ultra low resistance ohmic contacts to n-GaAs
Author :
Stall, Rick ; Wood, C.E.C. ; Board, K. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
Nonalloyed ohmic contacts to n-GaAs with contact resistances (¿c) below 1·0×10¿7 ¿ cm2 have been obtained using a Ge/GaAs heterojunction system. Metals are evaporated on heavily arsenic-doped germanium (Ge) layers grown on GaAs. Low values of ¿c result from the low Schottky barrier height (¿ 0·50 eV) and the high doping levels obtainable for n-Ge(¿ 1020 cm¿3).
Keywords :
III-V semiconductors; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; Ge/GaAs heterojunction system; Schottky barrier height; doping levels; n-GaAs; ohmic contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790570
