• DocumentCode
    953284
  • Title

    Ultra low resistance ohmic contacts to n-GaAs

  • Author

    Stall, Rick ; Wood, C.E.C. ; Board, K. ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    15
  • Issue
    24
  • fYear
    1979
  • Firstpage
    800
  • Lastpage
    801
  • Abstract
    Nonalloyed ohmic contacts to n-GaAs with contact resistances (¿c) below 1·0×10¿7 ¿ cm2 have been obtained using a Ge/GaAs heterojunction system. Metals are evaporated on heavily arsenic-doped germanium (Ge) layers grown on GaAs. Low values of ¿c result from the low Schottky barrier height (¿ 0·50 eV) and the high doping levels obtainable for n-Ge(¿ 1020 cm¿3).
  • Keywords
    III-V semiconductors; gallium arsenide; ohmic contacts; semiconductor-metal boundaries; Ge/GaAs heterojunction system; Schottky barrier height; doping levels; n-GaAs; ohmic contacts;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790570
  • Filename
    4243748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953284