DocumentCode
953318
Title
Effect of base dopants on the bias stress stability of AlGaAs/GaAs HBTs
Author
Ahmad, Tohari ; Rezazadeh, Ali A. ; Gill, Sandeep Singh
Author_Institution
Dept. of Electron. & Electr. Eng., London Univ., UK
Volume
29
Issue
19
fYear
1993
Firstpage
1725
Lastpage
1726
Abstract
The effect of three base dopants C, Be and Zn on the bias stress stability of npn AlGaAs/GaAs HBTs has been investigated for the first time. In this study 3*30 mu m2 HBTs were fabricated under identical process technology, emitter-base geometry and layout design. Following 24 h of identical bias stress, it is found that both Be- and Zn-doped devices exhibited current gain degradation as high as 68 and 57%, respectively, compared with only 7% for the C-doped device. The superior bias stress stability of C-doped HBTs is demonstrated.
Keywords
III-V semiconductors; aluminium compounds; beryllium; carbon; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; zinc; AlGaAs-GaAs; HBTs; base dopants; bias stress stability; current gain degradation; emitter-base geometry; layout design; process technology;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931147
Filename
237375
Link To Document