• DocumentCode
    953414
  • Title

    Responsivity and noise characterisation of ge avalanche photodiode throughout wavelength range 1.1¿1.7 ¿m

  • Author

    Brain, M.C.

  • Author_Institution
    Post Office Research Centre, Ipswich, UK
  • Volume
    15
  • Issue
    25
  • fYear
    1979
  • Firstpage
    821
  • Lastpage
    823
  • Abstract
    Mixed carrier injection in a commercial n+-p germaniun a.p.d. causes the excess multiplication noise to be wavelength dependent, with averaged k-values of around unity. The quantum efficiency is 70% between 1.1 and 1.5 ¿m, and the unmultiplied bulk leakage current density is estimated to be 3.5×10¿4 A cm¿2
  • Keywords
    avalanche photodiodes; optical communication equipment; Ge avalanche photodiode; excess multiplication noise; leakage noise; mixed carrier injection digital optical communication equipment; quantum efficiency; responsivity; unmultiplied bulk leakage current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790584
  • Filename
    4243767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953414