Title :
Responsivity and noise characterisation of ge avalanche photodiode throughout wavelength range 1.1¿1.7 ¿m
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
Mixed carrier injection in a commercial n+-p germaniun a.p.d. causes the excess multiplication noise to be wavelength dependent, with averaged k-values of around unity. The quantum efficiency is 70% between 1.1 and 1.5 ¿m, and the unmultiplied bulk leakage current density is estimated to be 3.5×10¿4 A cm¿2
Keywords :
avalanche photodiodes; optical communication equipment; Ge avalanche photodiode; excess multiplication noise; leakage noise; mixed carrier injection digital optical communication equipment; quantum efficiency; responsivity; unmultiplied bulk leakage current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790584
