The NDRW-characteristic of a plated wire memory element with an interlayer of tin

Plated wire memory elements with good NDRW-characteristics can be produced by a sandwich diffusion technique. A thin layer of tin is placed between a smooth copper and the permalloy film and the wire has to be annealed before and after the plating of the permalloy. The reproducibility and the extrapolated long time stability were good. The parameters of this technology and the influence of the two annealing temperatures on the memory characteristics are described. The two fold diffusion of the tin film into the copper and permalloy layers produces the NDRW-behavior.