• DocumentCode
    953539
  • Title

    Inductive Semiconductor Elements and Their Application in Bandpass Amplifiers

  • Author

    Dill, Hans G.

  • Author_Institution
    Dev. Lab., Semiconductor Div., Hughes Aircraft Co., Newport Beach, Calif.
  • Issue
    3
  • fYear
    1961
  • fDate
    7/1/1961 12:00:00 AM
  • Firstpage
    239
  • Lastpage
    250
  • Abstract
    Filter circuits using wire-wound inductors are hard to microminiaturize because coils are rather bulky. This paper discusses different inductive semiconductor devices which may replace coils where space is a problem. Forward-biased diodes, properly designed, behave like very lossy inductances. Combining them with negative-resistance devices increases the Q but creates serious temperature and stability problems. Relatively temperature-stable inductance elements are possible by combination of a phase shift network with a transistor. The principle, well-known in tube circuitry, gives high inductances with only a moderate Q because of the low input impedance of the transistor. Promising results have been demonstrated with a transistor operating in the a cutoff region. The device is dc stable, and has a moderate temperature sensitivity which might be partly compensated if necessary. Avalanche multiplication is used to reduce the damping resistance of the inductive transistor. Simple band-pass amplifier circuits are presented in the last section to demonstrate how to use the inductive transistor in practice.
  • Keywords
    Band pass filters; Circuit stability; Coils; Impedance; Inductance; Inductors; Semiconductor devices; Semiconductor diodes; Semiconductor optical amplifiers; Temperature;
  • fLanguage
    English
  • Journal_Title
    Military Electronics, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2511
  • Type

    jour

  • DOI
    10.1109/IRET-MIL.1961.5008354
  • Filename
    5008354