DocumentCode
953539
Title
Inductive Semiconductor Elements and Their Application in Bandpass Amplifiers
Author
Dill, Hans G.
Author_Institution
Dev. Lab., Semiconductor Div., Hughes Aircraft Co., Newport Beach, Calif.
Issue
3
fYear
1961
fDate
7/1/1961 12:00:00 AM
Firstpage
239
Lastpage
250
Abstract
Filter circuits using wire-wound inductors are hard to microminiaturize because coils are rather bulky. This paper discusses different inductive semiconductor devices which may replace coils where space is a problem. Forward-biased diodes, properly designed, behave like very lossy inductances. Combining them with negative-resistance devices increases the Q but creates serious temperature and stability problems. Relatively temperature-stable inductance elements are possible by combination of a phase shift network with a transistor. The principle, well-known in tube circuitry, gives high inductances with only a moderate Q because of the low input impedance of the transistor. Promising results have been demonstrated with a transistor operating in the a cutoff region. The device is dc stable, and has a moderate temperature sensitivity which might be partly compensated if necessary. Avalanche multiplication is used to reduce the damping resistance of the inductive transistor. Simple band-pass amplifier circuits are presented in the last section to demonstrate how to use the inductive transistor in practice.
Keywords
Band pass filters; Circuit stability; Coils; Impedance; Inductance; Inductors; Semiconductor devices; Semiconductor diodes; Semiconductor optical amplifiers; Temperature;
fLanguage
English
Journal_Title
Military Electronics, IRE Transactions on
Publisher
ieee
ISSN
0096-2511
Type
jour
DOI
10.1109/IRET-MIL.1961.5008354
Filename
5008354
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