Title :
Analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs for circuit simulation
Author :
Bindu, B. ; DasGupta, Nandita ; DasGupta, Amitava
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
fDate :
6/1/2006 12:00:00 AM
Abstract :
An analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs is presented. A simple polynomial approximation is used to model the sheet carrier concentration (psH) in the two-dimensional hole gas at the Si/SiGe interface. The interdependence of psH and the hole concentration at the Si/SiO2 interface (psS) is taken into account in the model, which considers current flow at both the Si/SiGe and the Si/SiO2 interfaces. This model is applicable to compressively strained SiGe buried-channel heterostructure PMOSFETs as well as tensile-strained surface-channel PMOSFETs. The model has been implemented in SABER, a circuit simulator. The results from the model show an excellent agreement with the experimental data.
Keywords :
Ge-Si alloys; MOSFET; semiconductor device models; silicon compounds; 2D hole gas; SABER; Si-SiGe; Si-SiO2; circuit simulation; drain current; heterojunction FET; heterostructure p-channel MOSFET; polynomial approximation; sheet carrier concentration; surface-channel PMOSFET; Analytical models; Capacitive sensors; Charge carrier processes; Circuit simulation; Germanium silicon alloys; Lattices; MOSFETs; Semiconductor films; Silicon germanium; Substrates; Analytical model; MOSFETs; circuit simulation; heterojunction FET;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.874242
