DocumentCode
953618
Title
Photo-f.e.t. method: high-resolution deep-level measurement technique using a m.e.s.f.e.t. structure
Author
Tegude, F.J. ; Heime, K.
Author_Institution
University of Duisburg, Solid State Electronics Department, FB9, Duisburg, West Germany
Volume
16
Issue
1
fYear
1980
Firstpage
22
Lastpage
23
Abstract
M.E.S.F.E.T.s with channels produced by diffusion from spun-on emulsion films into semi-insulating GaAs were investigated by a new technique: the photo-f.e.t. method. The advantage over the commonly used photocapacitance method is outlined and measurements are presented.
Keywords
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; semiconductor-metal boundaries; MESFET structure; high resolution deep level measurement technique; photo FET method;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800019
Filename
4243799
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