Title :
Photo-f.e.t. method: high-resolution deep-level measurement technique using a m.e.s.f.e.t. structure
Author :
Tegude, F.J. ; Heime, K.
Author_Institution :
University of Duisburg, Solid State Electronics Department, FB9, Duisburg, West Germany
Abstract :
M.E.S.F.E.T.s with channels produced by diffusion from spun-on emulsion films into semi-insulating GaAs were investigated by a new technique: the photo-f.e.t. method. The advantage over the commonly used photocapacitance method is outlined and measurements are presented.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; semiconductor-metal boundaries; MESFET structure; high resolution deep level measurement technique; photo FET method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800019
