Title :
The Effect of Heat Treatment on the Resistivity of Polycrystalline Silicon Films
Author_Institution :
Langley Research Center
fDate :
9/1/1975 12:00:00 AM
Abstract :
The resistivity of doped polycrystalline silicon films has been studied as a function of post deposition heat treatments in an oxidizing atmosphere. It was found that a short oxidation cycle may produce a resistivity increase as large as three orders of magnitude in the polycrystalline films. The extent of change was dependent on the initial resistivity and the films´ doping level and was independent of the total oxidation time.
Keywords :
Semiconductor device thermal factors; Semiconductor films; Silicon; Atmosphere; Conductivity; Furnaces; Heat treatment; Hydrogen; Optical films; Oxidation; Semiconductor films; Silicon; Substrates;
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
DOI :
10.1109/TPHP.1975.1135062
