Title :
Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic
Author :
Lassen, Peter S. ; Long, Stephen I. ; Nary, Kevin R.
Author_Institution :
Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
fDate :
10/1/1993 12:00:00 AM
Abstract :
Two-phase dynamic FET logic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with Pd=1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, is shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of three- and four-input TDFL gates and a completely dynamic TDFL XNOR gate. The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz
Keywords :
III-V semiconductors; Schottky gate field effect transistors; adders; carry logic; field effect integrated circuits; gallium arsenide; integrated logic circuits; logic gates; scaling circuits; 1 V; 1 W; 1.7 mW; 500 MHz; 850 MHz; 9.2 mW; GaAs; MESFET MSI circuits; TDFL gates; XNOR gate; ripple carry adders; static gates; two-phase dynamic FET logic; ultralow power; variable modulus prescaler; Adders; Circuit testing; FETs; Gallium arsenide; Inverters; Logic circuits; Logic gates; MESFET circuits; Power dissipation; Power supplies;
Journal_Title :
Solid-State Circuits, IEEE Journal of
