Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic

Author

Lassen, Peter S. ; Long, Stephen I. ; Nary, Kevin R.

Author_Institution

Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark

Volume

28

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1038

Lastpage

1045

Abstract

Two-phase dynamic FET logic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with P_d=1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, is shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of three- and four-input TDFL gates and a completely dynamic TDFL XNOR gate. The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz

Keywords

III-V semiconductors; Schottky gate field effect transistors; adders; carry logic; field effect integrated circuits; gallium arsenide; integrated logic circuits; logic gates; scaling circuits; 1 V; 1 W; 1.7 mW; 500 MHz; 850 MHz; 9.2 mW; GaAs; MESFET MSI circuits; TDFL gates; XNOR gate; ripple carry adders; static gates; two-phase dynamic FET logic; ultralow power; variable modulus prescaler; Adders; Circuit testing; FETs; Gallium arsenide; Inverters; Logic circuits; Logic gates; MESFET circuits; Power dissipation; Power supplies;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.237519

Filename

237519