Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Author

Jia, Shuo ; Cai, Yong ; Wang, Deliang ; Zhang, Baoshun ; Lau, Kei May ; Chen, Kevin J.

Author_Institution

Dept. of Electr. & Electron. Eng, Hong Kong Univ. of Sci. & Technol., China

Volume

53

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1474

Lastpage

1477

Abstract

High-performance enhancement-mode AlGaN/GaN HEMTs (E-HEMTs) were demonstrated with samples grown on a low-cost silicon substrate for the first time. The fabrication process is based on a fluoride-based plasma treatment of the gate region and postgate annealing at 450 °C. The fabricated E-HEMTs have nearly the same peak transconductance (G_m) and cutoff frequencies as the conventional depletion-mode HEMTs fabricated on the same wafer, suggesting little mobility degradation caused by the plasma treatment.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; plasma materials processing; semiconductor device manufacture; silicon; wide band gap semiconductors; HEMT; Si-AlGaN-GaN; cutoff frequency; enhancement-mode; fluoride-based plasma treatment; mobility degradation; postgate annealing; threshold voltage; transconductance; Aluminum gallium nitride; Annealing; Cutoff frequency; Fabrication; Gallium nitride; HEMTs; MODFETs; Plasmas; Silicon; Transconductance; AlGaN/GaN; HEMT; enhancement mode; fluoride; plasma treatment; silicon substrate; threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.873881

Filename

1637646