• DocumentCode
    953724
  • Title

    Strength of Gold-Plated Copper Leads on Thin Film Circuits Under Accelerated Aging

  • Author

    Hall, Peter M. ; Panousis, Nicholas T. ; Menzel, Paul R.

  • Author_Institution
    Bell Lab.
  • Volume
    11
  • Issue
    3
  • fYear
    1975
  • fDate
    9/1/1975 12:00:00 AM
  • Firstpage
    202
  • Lastpage
    205
  • Abstract
    The strengths of thermocompression bonds made between gold plated copper lead frames and gold metallized thin film circuits decrease in time when aged at 200-300°C in air or vacuum unless there is a diffusion barrier (such as nickel) between the copper and gold. After pulling bonds to destruction, failure modes and failed surfaces were characterized by scanning electron microscopy, Auger spectroscopy, electron microprobe, stylus probe, and X-ray diffraction. The failed surface on the substrate side of the bond was very rough, appearing to consist of "mountains" of almost pure Cu resting on a relatively smooth layer of grains, identified as Cu3Au, where the Cu3Au regions were Visible in the valleys between the copper mountains. The mating failed surface on the lead side of the bond was similarly rough, but with only a few scattered grains of Cu3Au evidently pulled out from the opposite surface. Oxidation, pore formation (Kirkendall effect), and ordered phase formation were considered as possible mechanisms for the degradation. Oxidation was ruled out by the observation that bonds degraded as fast in vacuum as in air. Ordered phase formation was judged more likely than pore formation as the primary mechanism. A parameter, \\tau , to describe the time required for measurable degradation was defined as the time for the average 90° peel strength of a 0.25 X 0.75 mm lead to decrease from six or seven pounds to four pounds. This parameter was found to be temperature activated with an activation energy of 0.8 eV. Since ordering and pore formation are both dominated by interdiffusion, \\tau was extrapolated to lower temperatures using the diffusion coefficient measurements of Pinnel and Bennett, resulting in a value of ten years at 50°C. However, with a 5000Å ± 2500Å nickel diffusion barrier between the copper lead and the gold plate, the value of \\tau extrapolated to 50°C was considerably greater than 40 years, as desired in Bell System equipment.
  • Keywords
    Component reliability; Thermocompression bonding; Thin-film circuits; Accelerated aging; Copper; Degradation; Electrons; Gold; Nickel; Oxidation; Rough surfaces; Surface roughness; Thin film circuits;
  • fLanguage
    English
  • Journal_Title
    Parts, Hybrids, and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0361-1000
  • Type

    jour

  • DOI
    10.1109/TPHP.1975.1135064
  • Filename
    1135064