Title :
X-ray lithography-an overview
Author :
Peckerar, Martin C. ; Maldonado, Juan R.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
9/1/1993 12:00:00 AM
Abstract :
The fundamentals of X-ray lithography are reviewed. Issues associated with resolution, wafer throughput, and process latitude are discussed. X-ray lithography is compared with other lithographic technologies; future advancements, such as X-ray projection lithography, are described. It is shown that the major barrier to the near-term success for X-ray lithography is the requirement for a defect-free one-to-one mask which satisfies the stringent image-placement needs of submicrometer patterning
Keywords :
X-ray lithography; integrated circuit technology; reviews; X-ray lithography; defect-free one-to-one mask; process latitude; projection lithography; resolution; submicrometer patterning; wafer throughput; Circuit synthesis; Costs; Image resolution; Manufacturing; Production; Prototypes; Silicon; Throughput; X-ray imaging; X-ray lithography;
Journal_Title :
Proceedings of the IEEE
