DocumentCode :
953813
Title :
Effectiveness of charged vacancies in diffusion of implanted boron in silicon
Author :
Franc, Runovc
Author_Institution :
Faculty of Electrical Engineering, Ljubljana, Yugoslavia
Volume :
16
Issue :
2
fYear :
1980
Firstpage :
49
Lastpage :
50
Abstract :
A method is proposed to obtain the temperature dependence of the index of effectiveness of charged vacancies relative to neutral ones in boron diffusion in silicon from an implanted source. The temperature dependence compares favourably with some theoretical results and enables the inclusion of third order-effects in processing simulation programs.
Keywords :
boron; diffusion in solids; elemental semiconductors; ion implantation; semiconductor doping; silicon; vacancies (crystal); B diffusion; Si; charged vacancies; implanted source; index of effectiveness; temperature dependence;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800037
Filename :
4243824
Link To Document :
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