• DocumentCode
    953813
  • Title

    Effectiveness of charged vacancies in diffusion of implanted boron in silicon

  • Author

    Franc, Runovc

  • Author_Institution
    Faculty of Electrical Engineering, Ljubljana, Yugoslavia
  • Volume
    16
  • Issue
    2
  • fYear
    1980
  • Firstpage
    49
  • Lastpage
    50
  • Abstract
    A method is proposed to obtain the temperature dependence of the index of effectiveness of charged vacancies relative to neutral ones in boron diffusion in silicon from an implanted source. The temperature dependence compares favourably with some theoretical results and enables the inclusion of third order-effects in processing simulation programs.
  • Keywords
    boron; diffusion in solids; elemental semiconductors; ion implantation; semiconductor doping; silicon; vacancies (crystal); B diffusion; Si; charged vacancies; implanted source; index of effectiveness; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800037
  • Filename
    4243824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953813