Title :
Pulsed electron-beam annealing of phosphorus-implanted silicon
Author :
Inada, Takashi ; Sugiyama, Takatoshi ; Okano, N. ; Ishikawa, Yozo
Author_Institution :
Hosei University, College of Engineering, Koganei, Japan
Abstract :
Electrical properties of phosphorus-implanted silicon annealed by a single shot of a high-power pulsed electron beam have been studied by differential Hall-effect and sheet-resistivity measurements. Nearly 100% electrical activation of implanted phosphorus can be obtained after electron-beam annealing at an incident energy density of 0.92 J/cm2. Uniformly distributed carrier concentration profiles have been formed by electron-beam annealing.
Keywords :
Hall effect; annealing; doping profiles; electrical conductivity of crystalline semiconductors and insulators; electron beam effects; elemental semiconductors; ion implantation; phosphorus; silicon; P implanted Si; carrier concentration profiles; differential Hall effect; doping profiles; electrical activation; pulsed electron beam annealing; sheet resistivity measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800041
