High Power Density Thin Film Resistors

Author

Faith, Thomas J., Jr.

Author_Institution

RCA, Princeton, NJ

Volume

11

Issue

4

fYear

1975

fDate

12/1/1975 12:00:00 AM

Firstpage

273

Lastpage

281

Abstract

Stability characteristics of nickel-chromium thin film resistors have been measured for power densities ranging up to 4500 W/in²Resistance change was found to depend on resistor temperature, sheet resistance and substrate Wpe. For 220 $\\Omega$ /sq films the time for a one percentresistance change, t1 $\\approx$ 3.8 X 10^-14exp(16820/T), where t1is in h and T is mean resistor temperature in °K. Resistors with 4 X 10^-5in²area, deposited on glazed alumina, increase 0.04°C for each W/in²power density. Consequently, for room temperature ambient t1 $\\approx$ ,1.7X 10⁵h (20 years)at 2000 W/in²(0.08W). Resistors on as-fired alumina run cooler (0.01°C/W/in²) and therefore have higher values of t1Top-hat trimmed resistors developed hot spots which caused failures at ~1000 W/in². Modified trim configurations were tested and shown to avoid these failures.

Keywords

Chromium alloys/compounds, devices; Nickel alloys/compounds, devices; Thin-film resistors; Density measurement; Electrical resistance measurement; Power measurement; Resistors; Stability; Substrates; Temperature dependence; Temperature distribution; Testing; Transistors;

fLanguage

English

Journal_Title

Parts, Hybrids, and Packaging, IEEE Transactions on

Publisher

ieee

ISSN

0361-1000

Type

jour

DOI

10.1109/TPHP.1975.1135076

Filename

1135076