DocumentCode :
953868
Title :
Flash memory goes mainstream
Author :
Dipert, Brian ; Hebert, Lou
Author_Institution :
Intel Corp., Folsom, CA, USA
Volume :
30
Issue :
10
fYear :
1993
Firstpage :
48
Lastpage :
52
Abstract :
The operation of the flash memory, which has matured over the last five years from a novelty product, is described. Both dual and single supply voltage devices are considered. Flash memory cycling, data reliability, program/erase algorithms, and blocking are discussed. Three approaches to flash memories are examined. The uses of these devices and some new architectures are considered.<>
Keywords :
data integrity; digital storage; memory architecture; architectures; blocking; cycling; data integrity; data reliability; flash memory; program/erase algorithms; supply voltage; Costs; EPROM; Electrons; Flash memory; Flash memory cells; Grounding; Nonvolatile memory; Threshold voltage; Tunneling; Turning;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/6.237588
Filename :
237588
Link To Document :
بازگشت