• DocumentCode
    953868
  • Title

    Flash memory goes mainstream

  • Author

    Dipert, Brian ; Hebert, Lou

  • Author_Institution
    Intel Corp., Folsom, CA, USA
  • Volume
    30
  • Issue
    10
  • fYear
    1993
  • Firstpage
    48
  • Lastpage
    52
  • Abstract
    The operation of the flash memory, which has matured over the last five years from a novelty product, is described. Both dual and single supply voltage devices are considered. Flash memory cycling, data reliability, program/erase algorithms, and blocking are discussed. Three approaches to flash memories are examined. The uses of these devices and some new architectures are considered.<>
  • Keywords
    data integrity; digital storage; memory architecture; architectures; blocking; cycling; data integrity; data reliability; flash memory; program/erase algorithms; supply voltage; Costs; EPROM; Electrons; Flash memory; Flash memory cells; Grounding; Nonvolatile memory; Threshold voltage; Tunneling; Turning;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/6.237588
  • Filename
    237588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953868