DocumentCode
953879
Title
Flip-Chip Header for IR Detector Arrays Operating at Cryogenic Temperatures
Author
Zappella, P.
Volume
11
Issue
4
fYear
1975
fDate
12/1/1975 12:00:00 AM
Firstpage
312
Lastpage
315
Abstract
The recent development of photovoltaic IR detectors made from thin films of IV-VI semiconductors, such as PbTe on BaF2 substrates has necessitated the development of a new type of header. The most significant requirements were for face down mounting to permit illumination through the BaF2 substrate and for Compatibility with the unusually large thermal expansion of the devices
2 X 105°K-l)when the devices are cycled in the\´ range of 300 to 77°K. The thermal expansion was successfully matched using a 4 structure that was predominately copper. The face down i mounting was obtained by flip-chip bonding to solder bumps i dammed by chromium on copper pads that were delineated ., from the foil component of a copper/copper sealing glass/ copper foil sandwich,
2 X 105°K-l)when the devices are cycled in the\´ range of 300 to 77°K. The thermal expansion was successfully matched using a 4 structure that was predominately copper. The face down i mounting was obtained by flip-chip bonding to solder bumps i dammed by chromium on copper pads that were delineated ., from the foil component of a copper/copper sealing glass/ copper foil sandwich,Keywords
Infrared detectors; Lead alloys/compounds, devices; Semiconductor device packaging; Copper; Cryogenics; Infrared detectors; Photovoltaic systems; Semiconductor thin films; Sensor arrays; Solar power generation; Substrates; Temperature; Thermal expansion;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1975.1135078
Filename
1135078
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