DocumentCode :
953891
Title :
Characteristics of High-Conversion-Efficiency Gallium-Arsenide Solar Cells
Author :
Gobat, A.R. ; Lamorte, M.F. ; McIver, G.W.
Author_Institution :
Semiconductor and Materials Division, Radio Corporation of America, Somerville, N. J.
Issue :
1
fYear :
1962
Firstpage :
20
Lastpage :
27
Abstract :
Gallium-arsenide solar cells having conversion-efficiency values greater than 11 per cent are described. Crystalline properties of gallium arsenide are discussed, and cell design considerations are given. Gallium arsenide provides several advantages over silicon in the fabrication of high-efficiency cells having improved temperature characteristics and higher radiation-resistance properties. Typical cell characteristics are presented and compared with those of silicon cells. In addition, data are given to show the effects on gallium arsenide cells of incident solar energy, temperature, radiation, and life.
Keywords :
Crystallization; Gallium arsenide; Impurities; Photovoltaic cells; Protons; Semiconductor materials; Silicon; Solar power generation; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Military Electronics, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2511
Type :
jour
DOI :
10.1109/IRET-MIL.1962.5008393
Filename :
5008393
Link To Document :
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