Title :
Modal analysis of PbSe-clad optical waveguides
Author :
Khodr, M.F. ; Sluss, J.J., Jr. ; Batchman, T.E.
Author_Institution :
Sch. of Electr. Eng., Oklahoma Univ., Norman, OK, USA
fDate :
8/1/1995 12:00:00 AM
Abstract :
A four-layer air-PbSe-BaF2-CaF2 structure has been analysed as an optical waveguide at a free space wavelength of 3.4 μm. The structure was found to preserve the unique properties of the more general semiconductor-clad optical waveguides. The critical values of PbSe thickness that lead to regions of selectively high and low attenuation were accurately determined. Field distribution plots were generated and used extensively to explain these effects. Calculations of the coupling coefficients data indicates that the PbSe-clad optical waveguide can be used efficiently in a number of different applications, such as polarisers, optical modulators and IR photodetectors
Keywords :
II-VI semiconductors; claddings; infrared detectors; lead compounds; optical films; optical losses; optical modulation; optical polarisers; optical waveguide theory; semiconductor thin films; 3.4 mum; IR photodetectors; PbSe thickness; PbSe-BaF2-CaF2; PbSe-clad optical waveguide; PbSe-clad optical waveguides; coupling coefficients data; field distribution plots; four-layer air-PbSe-BaF2-CaF2 structure; free space wavelength; high attenuation; low attenuation; modal analysis; optical modulators; optical polarisers; optical waveguide; selectively; semiconductor-clad optical waveguides;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19952012
