R.F. sputtered Au-Mo contacts to n-GaAs

Capacitance/voltage and current/voltage measurements of r.f. sputtered Au-Mo contacts to epitaxial n/n+ GaAs indicate that compensating damage centres are introduced into the near-surface region of GaAs during the sputtering process. The concentration of these damage centres may be reduced by annealing. For comparison, the net doping profiles in the GaAs were established via independent thermally evaporated Au contacts to the same epitaxial layer.