Title :
Ohmic contacts on n-GaAs produced by laser alloying of Ge films
Author :
Badertscher, G. ; Salathe, R.P. ; Luthy, W.
Author_Institution :
University of Bern, Institute of Applied Physics, Bern, Switzerland
Abstract :
A Q-switched Nd:y.a.g. laser has been used to form ohmic contacts on n-type GaAs covered with an evaporated film of Ge. The contacts showed good surface morphology with contact resistivities as low as 10¿6 ¿ cm2.
Keywords :
III-V semiconductors; gallium arsenide; laser beam applications; ohmic contacts; semiconductor technology; solid lasers; Ge films; Q-switched Nd:YAG laser; contact resistivity 10-6 ohm cm2; laser alloying; n-GaAs; ohmic contacts; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800084
