Title :
Kink-free narrow-stripe proton-isolated GaAlAs/GaAs injection lasers
Author :
Lindstr¿¿m, C. ; Tihanyi, P.
Author_Institution :
Institute of Microwave Technology, Stockholm, Sweden
Abstract :
Totally kink-free and very-narrow-stripe proton-isolated injection lasers are presented. The standard gold-indium metal-contact bonding system has been investigated, and as a result an improved bonding technique is presented. Kink-free lasers with output power up to 20 mW have been accelerated at 80°C ambient for 1000 h without any change in thermal resistance and with an expected lifetime of above 106 h at room temperature.
Keywords :
ageing; semiconductor junction lasers; 20 mW output power; 80 degree C ambient temperature; GaAlAs/GaAs injection lasers; accelerated ageing testing; expected lifetime; improved bonding technique; kinkfree DH lasers; life >106 h; narrow strip proton isolated injection lasers; thermal resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800091
