• DocumentCode
    954465
  • Title

    2.0 ¿m c.w. operation of GaInAsSb/GaSb d.h. lasers at 80 K

  • Author

    Kano, Hiroyuki ; Sugiyama, Koichi

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    16
  • Issue
    4
  • fYear
    1980
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    GaInAsSb/GaSb double-heterostructure (d.h.) lasers were fabricated by liquid-phase-epitaxial growth. C.W. operation was realised at 80 K with a wavelength of 2.0 ¿m. From measurement of laser thresholds as a function of temperature, it was shown that threshold currents for pulsed operation are described by the expression I(T) ¿ exp (T/T0), where T0 = 58 K.
  • Keywords
    III-V semiconductors; gallium compounds; liquid phase epitaxial growth; semiconductor junction lasers; 2 micron wavelength; 80K operation; CW operation; GaInAsSb/GaSb DH lasers; LPE fabricated lasers; fabrication; pulsed operation; semiconductor lasers; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800107
  • Filename
    4243902
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954465