Title :
2.0 ¿m c.w. operation of GaInAsSb/GaSb d.h. lasers at 80 K
Author :
Kano, Hiroyuki ; Sugiyama, Koichi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
GaInAsSb/GaSb double-heterostructure (d.h.) lasers were fabricated by liquid-phase-epitaxial growth. C.W. operation was realised at 80 K with a wavelength of 2.0 ¿m. From measurement of laser thresholds as a function of temperature, it was shown that threshold currents for pulsed operation are described by the expression I(T) ¿ exp (T/T0), where T0 = 58 K.
Keywords :
III-V semiconductors; gallium compounds; liquid phase epitaxial growth; semiconductor junction lasers; 2 micron wavelength; 80K operation; CW operation; GaInAsSb/GaSb DH lasers; LPE fabricated lasers; fabrication; pulsed operation; semiconductor lasers; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800107
