DocumentCode
954514
Title
Electron-Beam-Induced Currents in Simple Device Structures
Author
Galloway, Kenneth F. ; Leedy, Kathryn O. ; Keery, William J.
Author_Institution
National Bureau of Standards,Washington,DC
Volume
12
Issue
3
fYear
1976
fDate
9/1/1976 12:00:00 AM
Firstpage
231
Lastpage
236
Abstract
Electron-beam-induced current (EBIC) in semiconductor devices produced by the electron beam of a scanning electron microscope (SEM) can be used to image sub-surface device features and to measure certain material parameters, This paper presents a simple method of calculation for estimating the magnitude of EBIC signals. EBIC signals from silicon p-n junction diodes are compared with the results of the calculation, The application of EBIC to more complicated device structures is discussed.
Keywords
Electron-beam applications; Scanning electron microscopy; Semiconductor device measurements; Semiconductor materials measurements; Circuits; Conducting materials; Electron beams; Electronic components; NIST; P-n junctions; Scanning electron microscopy; Semiconductor diodes; Semiconductor materials; Silicon;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1976.1135138
Filename
1135138
Link To Document