Title :
Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs
Author :
Stall, R.A. ; Wood, C.E.C. ; Kirchner, P.D. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
Deep levels in GaAs grown by molecular-beam epitaxy have been examined. Dependence of both electron and hole trap densities on growth parameters such as growth temperature have been obtained.
Keywords :
III-V semiconductors; deep levels; electron traps; gallium arsenide; hole traps; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaAs; MBE; deep levels; electron trap densities; growth temperature; hole trap densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800122
