Title :
Calculations of the intrinsically higher temperature stability of electronic devices made from quaternary alloys
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
Abstract :
It is suggested that electronic devices made from quaternary alloys in which the carrier velocity is strongly influenced by alloy scattering will have an intrinsically higher temperature stability. This is illustrated by Monte Carlo computer simulations of the steady-state velocity-field characteristic of n-type Ga0.24In0.76As0.5P0.5 around the velocity peak.
Keywords :
III-V semiconductors; digital simulation; semiconductor devices; Monte Carlo computer simulations; alloy scattering; carrier velocity; electron velocity; quaternary alloys; semiconductor devices; steady state velocity field characts; temperature stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800127
