• DocumentCode
    954637
  • Title

    Calculations of the intrinsically higher temperature stability of electronic devices made from quaternary alloys

  • Author

    Adams, A.R.

  • Author_Institution
    University of Surrey, Department of Physics, Guildford, UK
  • Volume
    16
  • Issue
    5
  • fYear
    1980
  • Firstpage
    177
  • Lastpage
    178
  • Abstract
    It is suggested that electronic devices made from quaternary alloys in which the carrier velocity is strongly influenced by alloy scattering will have an intrinsically higher temperature stability. This is illustrated by Monte Carlo computer simulations of the steady-state velocity-field characteristic of n-type Ga0.24In0.76As0.5P0.5 around the velocity peak.
  • Keywords
    III-V semiconductors; digital simulation; semiconductor devices; Monte Carlo computer simulations; alloy scattering; carrier velocity; electron velocity; quaternary alloys; semiconductor devices; steady state velocity field characts; temperature stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800127
  • Filename
    4243923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954637