Title :
Simple method to determine the main Gunn domain parameters
Author :
Levinshtein, M.E. ; Simin, Grigory S.
Author_Institution :
Academy of Sciences of the USSR, A.F. Ioffe Physico-Technical Institute, Leningrad, USSR
Abstract :
A simple analytical method to determine the maximum field, outside field and excess voltage of a stable domain is put forward for any values of the carrier concentration, sample length and bias. This method provides good agreement with the exact solutions, for both stable-domain and transient processes in Gunn diodes.
Keywords :
Gunn devices; electric domains; semiconductor device models; Gunn devices; bias; carrier concentration; excess voltage; high field stable domains; maximum field; outside field; sample length; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800138
