• DocumentCode
    954736
  • Title

    Simple method to determine the main Gunn domain parameters

  • Author

    Levinshtein, M.E. ; Simin, Grigory S.

  • Author_Institution
    Academy of Sciences of the USSR, A.F. Ioffe Physico-Technical Institute, Leningrad, USSR
  • Volume
    16
  • Issue
    5
  • fYear
    1980
  • Firstpage
    191
  • Lastpage
    193
  • Abstract
    A simple analytical method to determine the maximum field, outside field and excess voltage of a stable domain is put forward for any values of the carrier concentration, sample length and bias. This method provides good agreement with the exact solutions, for both stable-domain and transient processes in Gunn diodes.
  • Keywords
    Gunn devices; electric domains; semiconductor device models; Gunn devices; bias; carrier concentration; excess voltage; high field stable domains; maximum field; outside field; sample length; semiconductor device models;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800138
  • Filename
    4243934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954736