Title :
Generation of nanosecond high-voltage pulses with high repetition rate
Author :
Kowatsch, M. ; Lafferl, J.
Author_Institution :
Technische Universitÿt Wien, Institut fÿr Physikalische Elektronik, Wien, Austria
Abstract :
The letter presents a circuit for the generation of 50 V pulses with 1.2 ns rise time, 2.5 ns duration and a variable pulse repetition frequency up to 3 MHz based on the effect of avalanche multiplication. The use of standard epitaxial silicon planar transistors instead of selected avalanche types permits safe operation with low sensitivity to temperature variations.
Keywords :
bipolar transistor circuits; pulse generators; Si epitaxial planar transistor circuits; avalanche multiplication; high voltage spike pulse generator; low sensitivity; variable pulse repetition frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800141
