Title :
Low leakage current and saturated reverse characteristic in broad-area InGaAsP diodes
Author :
Capasso, F. ; Logan, R.A. ; Foy, P.W. ; Sumski, S. ; Manchon, D.D.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Low-leakage-current broad-area InGaAsP heterojunction diodes have been fabricated using an improved mesa fabrication technique. A few units exhibited a saturated reverse characteristic.
Keywords :
III-V semiconductors; p-n heterojunctions; semiconductor diodes; semiconductor technology; InGaAsP heterojunction diodes; broad area diodes; low leakage diodes; mesa fabrication technique; saturated reverse characteristic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800177
