• DocumentCode
    954791
  • Title

    Low leakage current and saturated reverse characteristic in broad-area InGaAsP diodes

  • Author

    Capasso, F. ; Logan, R.A. ; Foy, P.W. ; Sumski, S. ; Manchon, D.D.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    16
  • Issue
    7
  • fYear
    1980
  • Firstpage
    241
  • Lastpage
    242
  • Abstract
    Low-leakage-current broad-area InGaAsP heterojunction diodes have been fabricated using an improved mesa fabrication technique. A few units exhibited a saturated reverse characteristic.
  • Keywords
    III-V semiconductors; p-n heterojunctions; semiconductor diodes; semiconductor technology; InGaAsP heterojunction diodes; broad area diodes; low leakage diodes; mesa fabrication technique; saturated reverse characteristic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800177
  • Filename
    4243941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954791