• DocumentCode
    955030
  • Title

    GaxIn1¿xAsy P1¿y/InP d.h. laser emitting at 1.15 ¿m grown by low-pressure metalorganic c.v.d.

  • Author

    Hirtz, J.P. ; Duchemin, J.P. ; Hirtz, P. ; de Cremoux, B. ; Pearsall, T. ; Bonnet, Marc

  • Author_Institution
    Thomson-CSF, LCR, Orsay, France
  • Volume
    16
  • Issue
    8
  • fYear
    1980
  • Firstpage
    275
  • Lastpage
    277
  • Abstract
    We report the first successful operation of a GaxIn1¿xAsy P1¿y/InP double heterostructure laser grown by low-pressure metalorganic chemical vapour deposition. This broad-area contact laser, emitting at 1.15 ¿m, has a threshold current density of 5.9 kA/cm2 at room temperature. The efficiency of photoluminescence and electroluminescence below laser threshold is comparable to that measured in structures grown by liquid-phase epitaxy.
  • Keywords
    III-V semiconductors; chemical vapour deposition; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.15 micron wavelength; DH laser; GaxIn1-xAsyP1-y/InP double heterostructure laser; VPE; chemical vapour deposition; efficiency; electroluminescence; low pressure metalorganic CVD; photoluminescence; room temperature operation; semiconductor lasers; threshold current density 5.9 kA/cm2;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800201
  • Filename
    4243966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955030