• DocumentCode
    955042
  • Title

    Role of substrate in electrical properties of GaAs implanted layers

  • Author

    Martin, G.M. ; Berth, M. ; Venger, C.

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée, Limeil Brévannes, France
  • Volume
    16
  • Issue
    8
  • fYear
    1980
  • Firstpage
    278
  • Lastpage
    279
  • Abstract
    The variation of implantation efficiency in different semi-insulating GaAs materials is shown to be correlated with he purity of the starting substrate, i.e. its Cr concentration and more especially its value of ND¿NA (shallow levels). This last value appears to be a key parameter in the electrical properties of implanted layers.
  • Keywords
    III-V semiconductors; gallium arsenide; ion implantation; semiconductor doping; Cr concentration; GaAs implanted layers; ND-NA value effects; electrical properties; ion implantation efficiency variation; semi-insulating GaAs materials; substrate role;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800203
  • Filename
    4243968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955042