Title :
Mobility of holes in the quaternary alloy In1-xGaxAsyP1-y
Author :
Hayes, J.R. ; Adams, A.R. ; Greene, P.D.
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
Abstract :
Hole mobilities have been measured at temperatures from 77 to 300 K in a wide range of quaternary alloys grown lattice-matched to InP substrates by liquid-phase epitaxy. Over most of the composition range the hole mobility at room temperature is lower than in InP itself, and is dominated by alloy scattering.
Keywords :
III-V semiconductors; carrier mobility; electronic conduction in crystalline semiconductor thin films; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; III-V semiconductors; In1-xGaxAsyP1-y; InP substrate lattice matched alloys; LPE; alloy scattering; hole mobility; quaternary alloys; temperatures 77 to 300K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800206
