• DocumentCode
    955072
  • Title

    Mobility of holes in the quaternary alloy In1-xGaxAsyP1-y

  • Author

    Hayes, J.R. ; Adams, A.R. ; Greene, P.D.

  • Author_Institution
    University of Surrey, Department of Physics, Guildford, UK
  • Volume
    16
  • Issue
    8
  • fYear
    1980
  • Firstpage
    282
  • Lastpage
    284
  • Abstract
    Hole mobilities have been measured at temperatures from 77 to 300 K in a wide range of quaternary alloys grown lattice-matched to InP substrates by liquid-phase epitaxy. Over most of the composition range the hole mobility at room temperature is lower than in InP itself, and is dominated by alloy scattering.
  • Keywords
    III-V semiconductors; carrier mobility; electronic conduction in crystalline semiconductor thin films; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; III-V semiconductors; In1-xGaxAsyP1-y; InP substrate lattice matched alloys; LPE; alloy scattering; hole mobility; quaternary alloys; temperatures 77 to 300K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800206
  • Filename
    4243971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955072