Title :
C.W. operation of AlxGa1¿xAs/AlyGa1¿yAs lasers grown by metalorganic c.v.d. in wavelength range 760~780 nm
Author :
Mori, Yoshifumi ; Watanabe, Naozo
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
Room-temperature c.w. operation of AlxGa1¿xAs/AlyGa1¿yAs d.h. structure visible (760~780 nm) lasers grown by metalorganic c.v.d. has been achieved. The planar structure lasers, with an oxide-insulated ~10 ¿m stripe and a cavity length of ~250 ¿m, showed c.w. threshold currents from 150 to 300 mA.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; AlxGa1-xAs/AlyGa1-yAs lasers; DH lasers; cavity length 250 micron; metalorganic CVD; oxide insulated 10 micron stripe; planar structure lasers; room temperature CW operation; semiconductor lasers; threshold currents 150 to 300 mA; wavelength range 760 to 780 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800207
