• DocumentCode
    955079
  • Title

    C.W. operation of AlxGa1¿xAs/AlyGa1¿yAs lasers grown by metalorganic c.v.d. in wavelength range 760~780 nm

  • Author

    Mori, Yoshifumi ; Watanabe, Naozo

  • Author_Institution
    Sony Corporation, Research Center, Yokohama, Japan
  • Volume
    16
  • Issue
    8
  • fYear
    1980
  • Firstpage
    284
  • Lastpage
    285
  • Abstract
    Room-temperature c.w. operation of AlxGa1¿xAs/AlyGa1¿yAs d.h. structure visible (760~780 nm) lasers grown by metalorganic c.v.d. has been achieved. The planar structure lasers, with an oxide-insulated ~10 ¿m stripe and a cavity length of ~250 ¿m, showed c.w. threshold currents from 150 to 300 mA.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; AlxGa1-xAs/AlyGa1-yAs lasers; DH lasers; cavity length 250 micron; metalorganic CVD; oxide insulated 10 micron stripe; planar structure lasers; room temperature CW operation; semiconductor lasers; threshold currents 150 to 300 mA; wavelength range 760 to 780 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800207
  • Filename
    4243972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955079