• DocumentCode
    955154
  • Title

    Thermal Fatigue Failure of Soft-Soldered Contacts to Silicon Power Transistors

  • Author

    Kang, Sung K. ; Zommer, Nathand ; Feucht, Donald L. ; Heckel, Richard W.

  • Author_Institution
    Nova Scotia Technical College,Halifax
  • Volume
    13
  • Issue
    3
  • fYear
    1977
  • fDate
    9/1/1977 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    321
  • Abstract
    Scanning electron microscopy was employed to characterize the structure of the soft-soldered joints in Si power transistors (type 2N3055), which failed electrically during thermal cycling. Cracks were observed in the soldered joint of many failed devices. Crack propagation seems to be accelerated by the presence of voids in the joint region. The importance of the reactions between the Ni layers and Sn of the .solder also affects the long-term reliability of the devices. Fractographs obtained from the failed devices reveal ductile fracture of the soft solder as well as creep or fatigue failure of the solder at the elevated temperature. Based on the structural studies of both failed and uncycled devices, some possibilities for improving device performance are discussed.
  • Keywords
    Power bipolar transistors; Semiconductor device metallization; Semiconductor device reliability; Semiconductor device thermal factors; Cooling; Fatigue; Joining materials; Power transistors; Silicon; Soldering; Temperature; Thermal degradation; Thermal expansion; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Parts, Hybrids, and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0361-1000
  • Type

    jour

  • DOI
    10.1109/TPHP.1977.1135203
  • Filename
    1135203