DocumentCode
955154
Title
Thermal Fatigue Failure of Soft-Soldered Contacts to Silicon Power Transistors
Author
Kang, Sung K. ; Zommer, Nathand ; Feucht, Donald L. ; Heckel, Richard W.
Author_Institution
Nova Scotia Technical College,Halifax
Volume
13
Issue
3
fYear
1977
fDate
9/1/1977 12:00:00 AM
Firstpage
318
Lastpage
321
Abstract
Scanning electron microscopy was employed to characterize the structure of the soft-soldered joints in Si power transistors (type 2N3055), which failed electrically during thermal cycling. Cracks were observed in the soldered joint of many failed devices. Crack propagation seems to be accelerated by the presence of voids in the joint region. The importance of the reactions between the Ni layers and Sn of the .solder also affects the long-term reliability of the devices. Fractographs obtained from the failed devices reveal ductile fracture of the soft solder as well as creep or fatigue failure of the solder at the elevated temperature. Based on the structural studies of both failed and uncycled devices, some possibilities for improving device performance are discussed.
Keywords
Power bipolar transistors; Semiconductor device metallization; Semiconductor device reliability; Semiconductor device thermal factors; Cooling; Fatigue; Joining materials; Power transistors; Silicon; Soldering; Temperature; Thermal degradation; Thermal expansion; Thermal stresses;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1977.1135203
Filename
1135203
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