Title :
Bipolar operation of power junction field effect transistors
Author :
Baliga, B.Jayant
Author_Institution :
General Electric Company, Corporate Research & Development Center, Schenectady, USA
Abstract :
Bipolar-mode power j.f.e.t. operation is demonstrated to result in a significant improvement in the on resistance, especially for high-voltage devices. Theoretical analysis and experimental data show that the on resistance varies inversely as the square root of the gate current. High-speed switching in this mode has also been achieved.
Keywords :
bipolar transistors; field effect transistors; power transistors; semiconductor device models; experimental data; high speed switching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800218
