DocumentCode
955186
Title
Bipolar operation of power junction field effect transistors
Author
Baliga, B.Jayant
Author_Institution
General Electric Company, Corporate Research & Development Center, Schenectady, USA
Volume
16
Issue
8
fYear
1980
Firstpage
300
Lastpage
301
Abstract
Bipolar-mode power j.f.e.t. operation is demonstrated to result in a significant improvement in the on resistance, especially for high-voltage devices. Theoretical analysis and experimental data show that the on resistance varies inversely as the square root of the gate current. High-speed switching in this mode has also been achieved.
Keywords
bipolar transistors; field effect transistors; power transistors; semiconductor device models; experimental data; high speed switching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800218
Filename
4243983
Link To Document