Title :
GaAs gigabit logic circuits using normally-off m.e.s.f.e.t.s
Author :
Mizutani, Tomoko ; Kato, Nei ; Ishida, Shigesuke ; Osafune, K. ; Ohmori, Masato
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Normally-off GaAs m.e.s.f.e.t. logic circuits fabricated by electron beam lithography have exhibited excellent high speed switching characteristics. The highest switching speed evaluated from a 15-stage ring oscillator is 30 ps per gate with a power dissipation of 1.9 mW. Binary frequency dividers have been fabricated with D-type flip-flops operating up to 3 GHz. A divide-by-eight counter has also operated at 2.5 GHz.
Keywords :
field effect integrated circuits; integrated logic circuits; D-type flip flops; GaAs gigabit MESFET logic circuits; binary frequency dividers; divide by eight counter; electron beam lithography; high speed switching characteristics; ring oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800226
