Title :
Low noise GaAs varactor and mixer diodes prepared by molecular beam epitaxy
Author :
Harris, J.J. ; Woodcock, J.M.
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
Schottky-barrier varactor and mixer diodes have been made from Ge-doped GaAs layers grown by molecular beam epitaxy. A microstrip parametric amplifier circuit incorporating a hyperabrupt varactor diode has given a noise temperature of 120 K and bandwidth of 180 MHz at 15 dB gain when pumped at 34 GHz, and a mixer diode mounted in a cryogenic receiver circuit had an s.s.b. noise temperature of 180 K at 90 GHz.
Keywords :
III-V semiconductors; Schottky-barrier diodes; mixers (circuits); molecular beam epitaxial growth; varactors; GaAs Schottky barrier diodes; Ge; cryogenic receiver circuit; hyperabrupt varactor diode; microstrip parametric amplifier circuit; mixer; molecular beam epitaxy; noise temperature; varactor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800228
