DocumentCode
955306
Title
Quantum-Dot Infrared Photodetectors
Author
Campbell, Joe C. ; Madhukar, Anupam
Author_Institution
Virginia Univ., Charlottesville
Volume
95
Issue
9
fYear
2007
Firstpage
1815
Lastpage
1827
Abstract
We present a study of a series of n-i-n InAs quantum-dot infrared photodetectors (QDIPs) with unintentionally doped active regions. Different quantum-dot capping layer materials (GaAs, InGaAs, and AlGaAs) are utilized to tune the operating wavelength and modify the QDIP performance. Normal-incidence operation with high detectivity in the mid (3-5 ) and long (8-12 ) wavelength regimes and the potential for multicolor operation is demonstrated.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InAs-GaAs-InGaAs-AlGaAs; detectivity; multicolor operation; operating wavelength; quantum-dot capping layer materials; quantum-dot infrared photodetectors; Crystalline materials; Electrons; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Infrared detectors; Infrared sensors; Infrared surveillance; Photodetectors; Quantum dots; Stationary state; AlGaAs; GaAs; InGaAs; infrared; photodetector; quantum dot; quantum-dot infrared photodetector (QDIP);
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/JPROC.2007.900967
Filename
4362701
Link To Document