• DocumentCode
    955374
  • Title

    Current transport in large-area Schottky barrier diodes

  • Author

    Visweswaran, G.S. ; Sharan, R.

  • Author_Institution
    Indian Institute of Technology, Kanpur, India
  • Volume
    67
  • Issue
    3
  • fYear
    1979
  • fDate
    3/1/1979 12:00:00 AM
  • Firstpage
    436
  • Lastpage
    437
  • Abstract
    The conventional method used to determine the mechanism of current transport in a Schottky barrier diode can lead to erroneous inferences if a fluctuation of parameters, such as that which would occur in a large area diode, is present. This has been illustrated by taking a Gaussian variation of a parameter in case of diodes showing T0anomaly.
  • Keywords
    Energy measurement; Equations; Iron; Photonic band gap; Schottky barriers; Schottky diodes; Silicon; Space charge; Temperature; Yttrium;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1979.11262
  • Filename
    1455531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955374