Title :
Current transport in large-area Schottky barrier diodes
Author :
Visweswaran, G.S. ; Sharan, R.
Author_Institution :
Indian Institute of Technology, Kanpur, India
fDate :
3/1/1979 12:00:00 AM
Abstract :
The conventional method used to determine the mechanism of current transport in a Schottky barrier diode can lead to erroneous inferences if a fluctuation of parameters, such as that which would occur in a large area diode, is present. This has been illustrated by taking a Gaussian variation of a parameter in case of diodes showing T0anomaly.
Keywords :
Energy measurement; Equations; Iron; Photonic band gap; Schottky barriers; Schottky diodes; Silicon; Space charge; Temperature; Yttrium;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1979.11262
