Transient thermal analysis of integral-heat-sink GaAs pulsed Gunn device

A technique is outlined for the estimation of the transient thermal impedance of the commonly used microwave device structure employing an integral heat sink (i.h.s.). The structure is analysed in three separate regions, approximations being made to the analytical solution of the classical heat flow equation applied to each. Theoretical predictions are compared with experimental observations on a typical i.h.s. Gunn device, and the implications on device design considered.