DocumentCode
955469
Title
GaInAsP/InP laser with monolithically integrated monitoring detector
Author
Iga, Kenichi ; Miller, B.I.
Author_Institution
Bell Laboratories, Holmdel, USA
Volume
16
Issue
9
fYear
1980
Firstpage
342
Lastpage
343
Abstract
Monolithic fabrication of a GaInAsP/InP laser with an etched mirror and monitoring detector is reported. Stripegeometry lasers operating at wavelengths of ~1.3 ¿m with threshold current of only 300 mA have been obtained. The monitoring detector on the same InP substrate was confirmed to operate with high sensitivity, comparable with that of an external Ge photodiode.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAsP-InP laser; etched mirror; monitoring detector; strip geometry semiconductor junction lasers; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800246
Filename
4244012
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