Title :
Controlling deep transient depletion of an m.o.s. capacitor
Author :
Pedron, T.P. ; Lanteri, J.P. ; Garrigues, M. ; Urgell, J.J.
Author_Institution :
Ecole Centrale de Lyon, Laboratoire d´Electronique, Automatique et Mesures Electriques, Ecully, France
Abstract :
The transient surface potential ¿s of an m.o.s. capacitor is regulated to a given value ¿0 by controlling the gate voltage. Simultaneously, the oxide voltage drop, depletion layer charge and generation current are measured. We present an application of this circuit to the determination of the deep doping profile in a silicon substrate.
Keywords :
doping profiles; metal-insulator-semiconductor structures; surface potential; MOS capacitor; Si substrate; depletion layer charge; doping profile; gate voltage; oxide voltage drop; transient surface potential;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800261
