Title :
Formation of SiO2 on contact surface and its effect on contact reliability
Author_Institution :
Electron. Inst., Hyogo Univ. of Teacher Educ., Hyogo, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
Electrical contact failure due to thermal decomposition of low-molecular-weight silicone vapor evaporated from such silicone products as oils and rubbers was investigated in a simulated environment. A glassy film deposit was found on the contact surface after exposure to elevated temperature in an atmosphere containing an extremely small quantity of the silicone. The film was clearly identified as amorphous SiO2 by ellipsometry, X-ray photoelectron spectrometry (XPS), and X-ray diffractometry (XRD). The growth of the film was directly related to the concentration of silicone vapor and temperature. The growth law was an exponential function of the exposure time. The film increases static contact resistance when it is thicker than 800 Å and the load is less than 5 g. The relationship between the concentration of the vapor, temperature, film thickness, and contact resistance is represented schematically
Keywords :
X-ray diffraction examination of materials; X-ray photoelectron spectra; contact resistance; electrical contacts; ellipsometry; failure analysis; silicon compounds; X-ray diffractometry; X-ray photoelectron spectrometry; contact failure; contact reliability; contact surface; ellipsometry; exponential function; glassy film deposit; growth law; oils; rubbers; silicone products; simulated environment; static contact resistance; thermal decomposition; Amorphous materials; Atmosphere; Atmospheric modeling; Contact resistance; Ellipsometry; Oils; Rubber products; Semiconductor films; Temperature; Thermal decomposition;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
